bzt03c... vishay semiconductors rev. 3, 12-mar-01 1 (4) www.vishay.com document number 85599 silicon zdiodes and transient voltage suppressors features glass passivated junction hermetically sealed package clamping time in picoseconds applications medium power voltage regulators and medium power transient suppression circuits 94 9539 order instruction type ordering code remarks bzt03c6v2 bzt03c6v2tap ammopack bzt03c6v2 bzt03c6v2tr tape and reel absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit power dissipation l=10 mm, t l =25 c p v 3.25 w t amb =25 c p v 1.3 w repetitive peak reverse power dissipation p zrm 10 w non repetitive peak surge power dissipation t p =100 s, t j =25 c p zsm 600 w junction temperature t j 175 c storage temperature range t stg 65...+175 c maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient l=10 mm, t l =constant r thja 46 k/w junction ambient on pc board with spacing 25 mm r thja 100 k/w electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =0.5a v f 1.2 v
bzt03c... vishay semiconductors rev. 3, 12-mar-01 2 (4) www.vishay.com document number 85599 type v z r zj and tk vz at i z i r at v r bzt03c... v v v %/k %/k ma a min. typ. max. typ. max. min. max. max. 6v2 5.8 6.2 6.6 1 2 0 0.07 100 1500 4.7 6v8 6.4 6.8 7.2 1 2 0 0.07 100 1000 5.1 7v5 7.0 7.5 7.9 1 2 0 0.07 100 750 5.6 8v2 7.7 8.2 8.7 1 2 0.03 0.08 100 600 6.2 9v1 8.5 9.1 9.6 2 4 0.03 0.08 50 20 6.8 10 9.4 10 10.6 2 4 0.05 0.09 50 10 7.5 11 10.4 10 11.6 4 7 0.05 0.10 50 4 8.2 12 11.4 12 12.7 4 7 0.05 0.10 50 3 9.1 13 12.4 13 14.1 5 10 0.05 0.10 50 2 10 15 13.8 15 15.6 5 10 0.05 0.10 50 1 11 16 15.3 16 17.1 6 15 0.06 0.11 25 1 12 18 16.8 18 19.1 6 15 0.06 0.11 25 1 13 20 18.8 20 21.2 6 15 0.06 0.11 25 1 15 22 20.8 22 23.3 6 15 0.06 0.11 25 1 16 24 22.8 24 25.6 7 15 0.06 0.11 25 1 18 27 25.1 27 28.9 7 15 0.06 0.11 25 1 20 30 28 30 32 8 15 0.06 0.11 25 1 22 33 31 33 35 8 15 0.06 0.11 25 1 24 36 34 36 38 21 40 0.06 0.11 10 1 27 39 37 39 41 21 40 0.06 0.11 10 1 30 43 40 43 46 24 45 0.07 0.12 10 1 33 47 44 47 50 24 45 0.07 0.12 10 1 36 51 48 51 54 25 60 0.07 0.12 10 1 39 56 52 56 60 25 60 0.07 0.12 10 1 43 62 58 62 66 25 80 0.08 0.13 10 1 47 68 64 68 72 25 80 0.08 0.13 10 1 51 75 70 75 79 30 100 0.08 0.13 10 1 56 82 77 82 87 30 100 0.08 0.13 10 1 62 91 85 91 96 60 200 0.09 0.13 5 1 68 100 94 100 106 60 200 0.09 0.13 5 1 75 110 104 110 116 80 250 0.09 0.13 5 1 82 120 114 120 127 80 250 0.09 0.13 5 1 91 130 124 130 141 110 300 0.09 0.13 5 1 100 150 138 150 156 130 300 0.09 0.13 5 1 110 160 153 160 171 150 350 0.09 0.13 5 1 120 180 168 180 191 180 400 0.09 0.13 5 1 130 200 188 200 212 200 500 0.09 0.13 5 1 150 220 208 220 233 350 750 0.09 0.13 2 1 160 240 228 240 256 400 850 0.09 0.13 2 1 180 270 251 270 289 450 1000 0.09 0.13 2 1 200 1) 10/1000 exp. falling pulse t p = 1000 s down to 50%
bzt03c... vishay semiconductors rev. 3, 12-mar-01 3 (4) www.vishay.com document number 85599 characteristics (t j = 25 c unless otherwise specified) 25 50 3 2 50 7 94 9086a figure 1. epoxy glass hard tissue, board thickness 1.5 mm, r thja 100 k/w 0 0 1 2 3 4 94 9584 40 80 120 160 p total power dissipation ( w ) tot t amb ambient temperature ( ? ? ? ?? ? ? ???????? ??? ??? ???? ?? ?? ????? ? ????? ???? ?????????? ?? ?????? ????????? ? ?? ?? ? ?? ?? ?? ?? ?? ? ?? ? ??????? ?????? ? ? ? ? ? ? ??????? ??????? ? ? ? ?? ? ? ? ? ????? ? ??????? ?????? ?? ??????? ??????? ?? ? ? ? ? ? ? ? ???????????? ???? ???? ??? ? ???? ?????? ? ? ? ? ? ??M ?????????? ? ? ? ? ? ? ? ????? ??? ???????? ???? ???? ?????????? ?? ???? ?????? ????????? ?? ? ??????? ?????????????? ? ??M ? ? ?? ? ? ? ???????? ????? ???? ?? ? ?????? ? ? ? ????????? ???????? ????????? ?? ??? ????????????? ? ?? ?M ?? ?M ??
bzt03c... vishay semiconductors rev. 3, 12-mar-01 4 (4) www.vishay.com document number 85599 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay-semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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